Structural, optical and electrical peculiarities of r.f. plasma sputtered indium tin oxide films
Identifieur interne : 007032 ( Main/Repository ); précédent : 007031; suivant : 007033Structural, optical and electrical peculiarities of r.f. plasma sputtered indium tin oxide films
Auteurs : RBID : Pascal:07-0501160Descripteurs français
- Pascal (Inist)
- Dépôt pulvérisation, Couche mince, Condition opératoire, Propriété électrique, Propriété optique, Pulvérisation irradiation, Mélange gaz, Traitement thermique, Facteur transmission, Facteur réflexion, Microstructure, Indice réfraction, Simulation numérique, Résistivité couche, Indium oxyde, Etain oxyde, Analyse diffraction RX, Texture, Composition phase, 8115C, 7350, 7866, 6855N.
English descriptors
- KwdEn :
- Digital simulation, Electrical properties, Gas mixtures, Heat treatments, Indium oxides, Microstructure, Operating conditions, Optical properties, Phase composition, Reflectivity, Refractive index, Sheet resistivity, Sputter deposition, Sputtering, Texture, Thin films, Tin oxides, Transmittance, X-ray diffraction analysis.
Abstract
In this work the influence of the deposition conditions on the structural, electrical and optical properties of the ITO films was studied. Films were deposited by r.f. plasma sputtering technique in Ar and varying Ar+O2 gas mixtures, with and without substrate heating. Transmittance and reflectance of the films were measured in the range 350-2500 nm; the refractive index (n) and the extinction coefficient (k) were calculated by the spectral data simulation. The sheet resistance of the films was measured by four-point probe method. X-ray diffraction analysis was performed to study the texture of the films. Threshold behaviour was observed in the optical and electrical properties of ITO films deposited in Ar+O2 atmosphere at a certain oxygen concentration determined by a fix combination of all other deposition conditions. A schematic diagram for the change of the film properties versus composition was suggested, which explains the obtained results.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural, optical and electrical peculiarities of r.f. plasma sputtered indium tin oxide films</title><author><name sortKey="Boycheva, Sylvia" uniqKey="Boycheva S">Sylvia Boycheva</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Thermal and Nuclear Engineering, Technical University of Sofia, 8 Kl. Ohridsky Blvd</s1><s2>Sofia 1000</s2><s3>BGR</s3><sZ>1 aut.</sZ></inist:fA14><country>Bulgarie</country><placeName><settlement type="city">Sofia</settlement><region nuts="2">Sofia-ville (oblast)</region></placeName></affiliation></author><author><name sortKey="Krasilnikova Sytchkova, Anna" uniqKey="Krasilnikova Sytchkova A">Anna Krasilnikova Sytchkova</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Optical Coatings Group, ENEA Research Center, Via Anguillarese 301</s1><s2>00060 Rome</s2><s3>ITA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Rome</settlement><region nuts="2">Latium</region></placeName></affiliation></author><author><name sortKey="Grilli, Maria Luisa" uniqKey="Grilli M">Maria Luisa Grilli</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Optical Coatings Group, ENEA Research Center, Via Anguillarese 301</s1><s2>00060 Rome</s2><s3>ITA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Rome</settlement><region nuts="2">Latium</region></placeName></affiliation></author><author><name sortKey="Piegari, Angela" uniqKey="Piegari A">Angela Piegari</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Optical Coatings Group, ENEA Research Center, Via Anguillarese 301</s1><s2>00060 Rome</s2><s3>ITA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Rome</settlement><region nuts="2">Latium</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0501160</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0501160 INIST</idno><idno type="RBID">Pascal:07-0501160</idno><idno type="wicri:Area/Main/Corpus">007207</idno><idno type="wicri:Area/Main/Repository">007032</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Digital simulation</term><term>Electrical properties</term><term>Gas mixtures</term><term>Heat treatments</term><term>Indium oxides</term><term>Microstructure</term><term>Operating conditions</term><term>Optical properties</term><term>Phase composition</term><term>Reflectivity</term><term>Refractive index</term><term>Sheet resistivity</term><term>Sputter deposition</term><term>Sputtering</term><term>Texture</term><term>Thin films</term><term>Tin oxides</term><term>Transmittance</term><term>X-ray diffraction analysis</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dépôt pulvérisation</term><term>Couche mince</term><term>Condition opératoire</term><term>Propriété électrique</term><term>Propriété optique</term><term>Pulvérisation irradiation</term><term>Mélange gaz</term><term>Traitement thermique</term><term>Facteur transmission</term><term>Facteur réflexion</term><term>Microstructure</term><term>Indice réfraction</term><term>Simulation numérique</term><term>Résistivité couche</term><term>Indium oxyde</term><term>Etain oxyde</term><term>Analyse diffraction RX</term><term>Texture</term><term>Composition phase</term><term>8115C</term><term>7350</term><term>7866</term><term>6855N</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this work the influence of the deposition conditions on the structural, electrical and optical properties of the ITO films was studied. Films were deposited by r.f. plasma sputtering technique in Ar and varying Ar+O<sub>2</sub> gas mixtures, with and without substrate heating. Transmittance and reflectance of the films were measured in the range 350-2500 nm; the refractive index (n) and the extinction coefficient (k) were calculated by the spectral data simulation. The sheet resistance of the films was measured by four-point probe method. X-ray diffraction analysis was performed to study the texture of the films. Threshold behaviour was observed in the optical and electrical properties of ITO films deposited in Ar+O<sub>2</sub> atmosphere at a certain oxygen concentration determined by a fix combination of all other deposition conditions. A schematic diagram for the change of the film properties versus composition was suggested, which explains the obtained results.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>515</s2></fA05><fA06><s2>24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Structural, optical and electrical peculiarities of r.f. plasma sputtered indium tin oxide films</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>First International Symposium on Transparent Conducting Oxides: 1st IS TCO 2006</s1></fA09><fA11 i1="01" i2="1"><s1>BOYCHEVA (Sylvia)</s1></fA11><fA11 i1="02" i2="1"><s1>KRASILNIKOVA SYTCHKOVA (Anna)</s1></fA11><fA11 i1="03" i2="1"><s1>GRILLI (Maria Luisa)</s1></fA11><fA11 i1="04" i2="1"><s1>PIEGARI (Angela)</s1></fA11><fA12 i1="01" i2="1"><s1>KIRIAKIDIS (George)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>BARATON (Marie-Isabelle)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>MAO (Samuel)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Thermal and Nuclear Engineering, Technical University of Sofia, 8 Kl. Ohridsky Blvd</s1><s2>Sofia 1000</s2><s3>BGR</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Optical Coatings Group, ENEA Research Center, Via Anguillarese 301</s1><s2>00060 Rome</s2><s3>ITA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>Physics Dpt. Univ. of Crete, IESL/FORTH, Voutes, PO Box 1385</s1><s2>Heraklion 71110 Crete</s2><s3>GRC</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>University of Limoges</s1><s3>FRA</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>University of Berkeley-California</s1><s3>USA</s3><sZ>3 aut.</sZ></fA15><fA20><s1>8469-8473</s1></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000143469600080</s5></fA43><fA44><s0>0000</s0><s1>© 2007 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>19 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>07-0501160</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>In this work the influence of the deposition conditions on the structural, electrical and optical properties of the ITO films was studied. Films were deposited by r.f. plasma sputtering technique in Ar and varying Ar+O<sub>2</sub> gas mixtures, with and without substrate heating. Transmittance and reflectance of the films were measured in the range 350-2500 nm; the refractive index (n) and the extinction coefficient (k) were calculated by the spectral data simulation. The sheet resistance of the films was measured by four-point probe method. X-ray diffraction analysis was performed to study the texture of the films. Threshold behaviour was observed in the optical and electrical properties of ITO films deposited in Ar+O<sub>2</sub> atmosphere at a certain oxygen concentration determined by a fix combination of all other deposition conditions. A schematic diagram for the change of the film properties versus composition was suggested, which explains the obtained results.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C50</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H66</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H55N</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Dépôt pulvérisation</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Sputter deposition</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Condition opératoire</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Operating conditions</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Condición operatoria</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Electrical properties</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Propriété optique</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Optical properties</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Pulvérisation irradiation</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Sputtering</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Mélange gaz</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gas mixtures</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Traitement thermique</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Heat treatments</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Facteur transmission</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Transmittance</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Factor transmisión</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Facteur réflexion</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Reflectivity</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Microstructure</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Microstructure</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indice réfraction</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Refractive index</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Simulation numérique</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Digital simulation</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Résistivité couche</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Sheet resistivity</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Indium oxyde</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium oxides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Etain oxyde</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Tin oxides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Analyse diffraction RX</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>X-ray diffraction analysis</s0><s5>29</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Texture</s0><s5>30</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Texture</s0><s5>30</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Composition phase</s0><s5>31</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Phase composition</s0><s5>31</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Composición fase</s0><s5>31</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>8115C</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>7350</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>7866</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>6855N</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>330</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>IS-TCO 2006 : International Symposium on Transparent Conducting Oxides</s1><s2>1</s2><s3>Island of Crete GRC</s3><s4>2006-10-23</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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